2007. 5. 22 1/3 semiconductor technical data ktc4521f triple diffused npn transistor revision no : 0 switching regulator application. high voltage switching application. features excellent switching times. : t on =0.5 s(max.), t f =0.3 s(max.), at i c =4a. high collector voltage : v ceo =500v. maximum rating (ta=25 ) dim millimeters to-220is 0.76+0.09/-0.05 a b c d e f g 0.5+0.1/-0.05 h 1.2+0.25/-0.1 1.5+0.25/-0.1 j k l m n p q r f q 1 2 3 l p n b g j m d n h e r k l s 0.5 typ s d a c 2.70 0.3 + _ 12.0 0.3 + _ 13.6 0.5 + _ 3.7 0.2 + _ 3.2 0.2 + _ 10.0 0.3 + _ 15.0 0.3 + _ 3.0 0.3 + _ 4.5 0.2 + _ 2.54 0.1 + _ + 2.6 0.2 _ 6.8 0.1 + _ 1. base 2. collector 3. emitter electrical characteristics (ta=25 ) characteristic symbol rating unit collector-base voltage v cbo 800 v collector-emitter voltage v ceo 500 v emitter-base voltage v ebo 7 v collector current dc i c 5 a pulse i cp 10 base current i b 2 a collector power dissipation (tc=25 ) p c 40 w junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =500v, i e =0 - - 10 a emitter cut-off current i ebo v eb =5v, i c =0 - - 10 a collector-emitter sustaning voltage v cex(sus) i c =2.5a, i b1 =-i b2 =1a l=1mh, clamped 500 - - v collector-emitter saturation voltage v ce(sat) i c =3a, i b =0.6a - - 1 v base-emitter saturation voltage v be(sat) i c =3a, i b =0.6a - - 1.5 v dc current gain h fe (1) (note) v ce =5v, i c =0.6a 15 - 50 h fe (2) v ce =5v, i c =3a 8 - - collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 80 - pf transition frequency f t v ce =10v, i c =0.6a - 18 - mhz switching time turn on time t on i b1 50? b1 i cc v =200v i b2 i b2 20 s i =0.8a , i =-1.6a 1% b1 b2 output duty cycle input < = - - 0.5 s storage time t stg - - 3 fall time t f - - 0.3 note : h fe (1) classification r:15 30, o:20 40, y:30 50
2007. 5. 22 2/3 ktc4521f revision no : 0 collector emitter voltage v (v) collector current 0 0 c i - v i (a) 2 1 2 3 4 ce c collector current i (a) 0.02 0.1 10 0.01 dc current gain h 0.2 0.5 2 2 5 20 100 200 1000 fe h - i c fe 10 50 500 0.05 1 5 0.5 collector current i (a) v , v - i 2 saturation voltage 0.02 0.1 0.05 0.02 0.01 0.5 0.2 1 c 0.1 i /i =5 0.05 0.2 5 10 c 12 10 5 ce(sat) 0.01 base emitter voltage v (v) collector current 0 1 2 3 i (a) c 4 be 0.1 0.2 5 collector current i (a) 1 0.01 collector emitter voltage v (a) ce c 2 5 10 50 100 200 1000 500 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 i max. c (continuous) i max.(pulse) c dc operation *10ms * 1ms *100 s * 50 s * single nonrepetitive plus ta=25 c safe operating area switching time ( s) collector current i (a) 0.01 c 0.1 0.2 0.5 1 2 5 10 0.02 0.05 0.1 0.2 0.5 1 2 5 10 5 46810 cce i =0 b i =20ma b i =50ma b i = 100ma b i =200ma b i =400ma b i =600ma b b i =1.2a b i =1a i =800ma b 0 v =5v ce be(sat) c v , v (v) be(sat) ce(sat) be(sat) v ce(sat) v b 0.4 0.6 0.8 1.0 1.2 6 v =5v ce switching characteristics t stg on t f t v max. ceo curves must be derated linearly with increase in temperature v - i be c
2007. 5. 22 3/3 ktc4521f revision no : 0 collector current i (a) 10 0.01 collector emitter voltage v (a) ce c 20 50 100 200 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 reverse bias safe operating area collector power dissipation p (w) ambient temperature ta ( c) 0 c 25 500 1000 2000 5000 10000 l=200 h i 2=-1a b 50 75 100 125 150 175 200 0 10 20 30 40 50 60 70 80 pc - ta
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